PDTC123JE NXP Semiconductors, PDTC123JE Datasheet - Page 5

• Manufacturer Part Number: PDTC123JE
• Manufacturer: NXP Semiconductors

Specifications of PDTC123JE

• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 100
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-416
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 13
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 100 μA; V
= 5 mA; V
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
5
CONDITIONS
C
B
C
CB
CE
E
B
B
= 0.25 mA
= 0
= 10 mA
CE
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
= 0.3 V
= 5 V
j
= 150 °C
−
−
−
−
100
−
−
1.1
1.54
17
−
MIN.
PDTC123J series
−
−
−
−
−
−
0.6
0.75
2.2
21
−
TYP.
Product data sheet
100
1
50
180
−
100
0.5
−
2.86
26
2.5
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT