PDTC123JE NXP Semiconductors, PDTC123JE Datasheet - Page 2

• Manufacturer Part Number: PDTC123JE
• Manufacturer: NXP Semiconductors

Specifications of PDTC123JE

• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 100
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-416
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 13
PDTC123JE
PDTC123JEF
PDTC123JK
PDTC123JM
PDTC123JS
PDTC123JT
PDTC123JU
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
−
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TC123J
*25
*49
DW
28
28
49
(1)
(1)
PDTC123J series
PDTA123JE
PDTA123JEF
PDTA123JK
PDTA123JM
PDTA123JS
PDTA123JT
PDTA123JU
−
−
2.2
47
PNP COMPLEMENT
TYP.
Product data sheet
50
100
−
−
MAX.
V
mA
kΩ
kΩ
UNIT