BFQ68 NXP Semiconductors, BFQ68 Datasheet - Page 6

• Manufacturer Part Number: BFQ68
• Manufacturer: NXP Semiconductors

Specifications of BFQ68

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 300mA
• Dc Current Gain (min): 25
• Power Dissipation: 4.5W
• Frequency (max): 4GHz
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 4 GHz wideband transistor
I
Fig.5
Fig.7
V
E
d im
(dB)
(pF)
CE
C c
= i
e
= 15 V; V
20
30
40
50
60
70
6
4
2
0
= 0; f = 1 MHz
0
0
Collector capacitance as a function of
collector-base voltage.
Intermodulation distortion as a function of
collector current.
o
= 1.6 V; f
100
(p q r)
= 793.25 MHz.
10
200
V
CB
I
(V)
C
(mA)
MEA271
MEA269
300
20
6
handbook, halfpage
I
gain
(dB)
C
= 240 mA; V
40
30
20
10
0
0.1
Fig.6 Gain as a function of frequency.
CE
= 15 V; T
amb
= 25 C
1
G UM
Is
12
I
2
f (GHz)
Product specification
MEA270
BFQ68
10