BFQ68 NXP Semiconductors, BFQ68 Datasheet - Page 5

• Manufacturer Part Number: BFQ68
• Manufacturer: NXP Semiconductors

Specifications of BFQ68

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 300mA
• Dc Current Gain (min): 25
• Power Dissipation: 4.5W
• Frequency (max): 4GHz
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
September 1995
handbook, full pagewidth
handbook, halfpage
NPN 4 GHz wideband transistor
Fig.3
f = 40 to 860 MHz.
L1 = L2 = 5 H Ferroxcube choke.
V
h
CE
FE
120
= 10 V; T
80
40
0
0
DC current gain as a function of collector
current.
j
= 25 C.
40
80
75
Fig.2 Intermodulation distortion MATV test circuit.
120
V BB
2.2 nF
I
C
1.8 pF
MBB361
(mA)
2.2 nF
4.7
160
L1
2.2 k
1.2
pF
5
180
handbook, halfpage
2.2 nF
24
1.2
pF
V
Fig.4
(GHz)
CE
f T
L2
= 15 V; f = 500 MHz; T
6
4
0
2
10
DUT
24
2.2 nF
Transition frequency as a function of
collector current.
2.2 nF
0.68 pF
MEA273
75
V CC
j
= 25 C
10
2
I
Product specification
C
(mA)
MEA272
BFQ68
10
3