LH28F016SCHR-L95 Sharp Electronics, LH28F016SCHR-L95 Datasheet - Page 32

• Manufacturer Part Number: LH28F016SCHR-L95
• Manufacturer: Sharp Electronics

Specifications of LH28F016SCHR-L95

• Cell Type: NOR
• Density: 16Mb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

LH28F016SCT
NOTES:
1. Sampled, not 100% tested.
2. Refer to Table 4 for valid A
3. V
4. In systems where CE defines the write pulse width (within a longer WE timing waveform),
32
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
SYMBOL
AVAV
PHEL
WLEL
ELEH
PHHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVPH
V
determination of block erase, byte write or lock bit configuration success (SR.1, SR.3, SR.4, SR.5 = 0).
all setup, hold, and inactive WE times should be measured relative to the CE waveform.
CCW
CC
= 3.3 V ±0.3 V, T
should be held at V
Write Cycle Time
RP HIGH Recovery to CE Going LOW
WE Setup to CE Going LOW
CE Pulse Width
RP V
V
Address Setup to CE Going HIGH
Data Setup to CE Going HIGH
Data Hold from CE HIGH
Address Hold from CE HIGH
WE Hold from CE HIGH
CE Pulse Width HIGH
CE HIGH to RY/BY Going LOW
Write Recovery before Read
V
RP V
PP
PP
Setup to CE Going HIGH
Hold from Valid SRD, RY/BY HIGH
HH
HH
Setup to CE Going HIGH
Hold from Valid SRD, RY/BY HIGH
PPH1/2/3
IN
A
and D
= -40°C to +85°C
, (and if necessary, RP should be held at V
PARAMETER
IN
for block erase, byte write or lock bit configuration.
HH
LH28F016SC-L120
) until
MIN.
120
100
100
70
50
50
25
1
0
5
5
0
0
0
0
MAX.
100
UNIT NOTES
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
16M Flash Memory
1
2
2
Data Sheet