LH28F160BJHE-TTLZE Sharp Electronics, LH28F160BJHE-TTLZE Datasheet - Page 8

• Manufacturer Part Number: LH28F160BJHE-TTLZE
• Manufacturer: Sharp Electronics

Specifications of LH28F160BJHE-TTLZE

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 20b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

DQ
Symbol
A
V
GND
WE#
WP#
CE#
OE#
V
RP#
0
0
NC
CCW
-A
-DQ
CC
19
15
OUTPUT
SUPPLY
SUPPLY
SUPPLY
INPUT/
INPUT
INPUT
INPUT
INPUT
INPUT
INPUT
Type
ADDRESS INPUTS: Inputs for addresses during read and write operations. Addresses are
internally latched during a write cycle.
A
A
DATA INPUT/OUTPUTS: Inputs data and commands during CUI write cycles; outputs data
during memory array, status register and identifier code read cycles. Data pins float to high-
impedance when the chip is deselected or outputs are disabled. Data is internally latched during a
write cycle.
CHIP ENABLE: Activates the device’s control logic, input buffers, decoders and sense amplifiers.
CE#-high deselects the device and reduces power consumption to standby levels.
RESET: Resets the device internal automation. RP#-high enables normal operation. When driven
low, RP# inhibits write operations which provides data protection during power transitions. Exit
from reset mode sets the device to read array mode. RP# must be V
OUTPUT ENABLE: Gates the device’s outputs during a read cycle.
WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are latched on
the rising edge of the WE# pulse.
WRITE PROTECT: When WP# is V
V
blocks.
BLOCK ERASE, FULL CHIP ERASE, WORD WRITE OR LOCK-BIT CONFIGURATION
POWER SUPPLY: For erasing array blocks, writing words or configuring lock-bits. With
V
lock-bit configuration with an invalid V
results and should not be attempted. Applying 12V±0.3V to V
done for a maximum of 1000 cycles on each block. V
total of 80 hours maximum.
DEVICE POWER SUPPLY: Do not float any power pins. With V
the flash memory are inhibited. Device operations at invalid V
Characteristics) produce spurious results and should not be attempted.
GROUND: Do not float any ground pins.
NO CONNECT: Lead is not internal connected; it may be driven or floated.
15
12
IH
CCW
-A
-A
, locked boot blocks can not be written or erased. WP# is not affected parameter and main
19
19
V
: Main Block Address.
: Boot and Parameter Block Address.
CCWLK
, memory contents cannot be altered. Block erase, full chip erase, word write and
Table 1. Pin Descriptions
IL
, boot blocks cannot be written or erased. When WP# is
Name and Function
CCW
(see 6.2.3 DC Characteristics) produce spurious
CCW
may be connected to 12V±0.3V for a
CCW
CC
voltage (see 6.2.3 DC
CC
IL
during erase/write can only be
during power-up.
V
LKO
, all write attempts to
Rev. 1.27