LH28F008SAN-85 Sharp Electronics, LH28F008SAN-85 Datasheet - Page 28
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LH28F008SAN-85
Manufacturer Part Number
LH28F008SAN-85
Description
Manufacturer
Sharp Electronics
Datasheet
1.LH28F008SAN-85.pdf
(47 pages)
Specifications of LH28F008SAN-85
Cell Type
NOR
Density
8Mb
Access Time (max)
85ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
20b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
SOP
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
1M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LH28F008SAN-85
Manufacturer:
SHARP
Quantity:
5 380
Company:
Part Number:
LH28F008SAN-85
Manufacturer:
SHARP
Quantity:
5 704
16. ALTERNATIVE CE#-CONTROLLED WRITES
NOTES:
1. Chip-Enable Controlled Writes: Write operations are driven by the valid combination of CE# and WE#. In systems where CE#
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. Refer to Table 3 for valid D
5. Byte write and block erase durations are measured to completion (SR.7=1, RY/BY#=V
6. See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteristics.
7. See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHQV1
EHQV2
EHGL
QVVL
Symbol
defines the write pulsewidth (within a longer WE# timing waveform), all setup, hold and inactive WE# times should be measured
relative to the CE# waveform.
nation of byte write/block erase success (SR.3/4/5=0).
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
WS
CP
VPS
AS
DS
DH
AH
WH
EPH
VPH
Write Cycle Time
RP# High Recovery to
CE# Going Low
WE# Setup to CE# Going
Low
CE# Pulse Width
V
High
Address Setup to CE#
Going High
Data Setup to CE# Going
High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going
Low
Duration of Byte Write
Operation
Duration of Block Erase
Operation
Write Recovery before
Read
V
RY/BY# High
PP
PP
Setup to CE# Going
Hold from Valid SRD,
Versions
Parameter
IN
IN
for byte write or block erasure.
for byte write or block erasure.
Notes
2,5
2
2
3
4
5
5
(1)
V
Min.
100
0.3
85
50
40
40
25
CC
1
0
5
5
0
6
0
0
=5V±0.25V
Max.
100
(6)
OH
). V
PP
should be held at V
Min.
100
V
0.3
90
50
40
40
25
1
0
5
5
0
6
0
0
CC
=5V±0.5V
Max.
PPH
100
(7)
until determi-
Unit
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
25