LH28F008SAN-85 Sharp Electronics, LH28F008SAN-85 Datasheet - Page 22

• Manufacturer Part Number: LH28F008SAN-85
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAN-85

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 85ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: SOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

sharp
DC CHARACTERISTICS
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
2. I
3. Includes RY/BY#.
4. Block Erases/Byte Writes are inhibited when V
13. CAPACITANCE
NOTE:
1. Sampled, not 100% tested.
Symbol
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
C
C
Symbol
CCW
CCE
CCES
PPS
PPD
PPR
PPW
PPE
PPES
IL
IH
OL
OH1
OH2
PPL
PPH
LKO
IN
OUT
CCES
is specified with the device deselected. If read while in Erase Suspend Mode, current draw is the sum of I
V
V
V
V
V
Current
V
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage (TTL)
Output High Voltage
(CMOS)
V
Operations
V
Operations
V
Voltage
Input Capacitance
CC
CC
CC
PP
PP
PP
PP
PP
PP
PP
PP
CC
Output Capacitance
Standby Current
Deep PowerDown
Read Current
Byte Write Current
Block Erase Current
Erase Suspend Current
during Normal
during Erase/Write
Byte Write Current
Block Erase Current
Erase Suspend Current
Erase/Write Lock
Parameter
Parameter
(1)
(Continued)
Typ.
6
8
PP
Notes
=V
1,2
Max.
1
1
1
1
1
1
1
1
3
3
4
12
8
PPL
T
A
and not guaranteed in the range between V
LHF08SZM
=+25˚C, f=1MHz
0.85V
V
Unit
CC
Min.
11.4
pF
pF
-0.5
2.0
2.4
0.0
2.0
-0.4
CC
CC
V
V
Condition
=5.0V, V
IN
OUT
Typ.
12.0
=0V
0.1
10
10
10
10
90
5
=0V
PP
V
=12.0V, T
CC
Max.
+15/
-300
0.45
12.6
200
200
5.0
0.8
6.5
30
30
10
30
30
+0.5
A
=+25˚C.
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
PPH
Byte Write In Progress
Block Erase In Progress
Block Erase Suspended
CE#=V
V
RP#=GND±0.2V
V
V
Byte Write in Progress
V
Block Erase in Progress
V
Block Erase Suspended
V
I
V
I
I
V
I
V
OL
OH
OH
OH
and V
PP
PP
PP
PP
PP
CC
CC
CC
CC
=5.8mA
=-2.5mA
=-2.0mA
=-100µA
Test Condition
=GND
>V
=V
=V
=V
=V
=V
=V
=V
PPL
CC
PPH
PPH
PPH
CC
CC
CC
CC
IH
CCES
.
Min.
Min.
Min.
Min.
and I
CCR
.
19