LH28F800BVE-TV85 Sharp Electronics, LH28F800BVE-TV85 Datasheet - Page 11

LH28F800BVE-TV85

Manufacturer Part Number
LH28F800BVE-TV85
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F800BVE-TV85

Cell Type
NOR
Density
8Mb
Access Time (max)
85ns
Interface Type
Parallel
Boot Type
Top
Address Bus
20/19Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
65mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
3.5 Read Identifier Codes Operation
The
manufacturer code and device code (see Figure 4). Using
the manufacturer and device codes, the system CPU can
automatically match the device with its proper algorithms.
[A
7FFFF
00002
00000
00001
18
-A
Figure 4. Device Identifier Code Memory Map
read
0
]
identifier
Reserved for Future Implementation
codes
Manufacturer Code
Device Code
operation
outputs
the
3.6 Write
Writing commands to the CUI enable reading of device
data and identifier codes. They also control inspection and
clearing of the status register. When V
V
and word/byte write.
The Block Erase command requires appropriate command
data and an address within the block to be erased. The
Word/Byte Write command requires the command and
address of the location to be written.
The CUI does not occupy an addressable memory
location. It is written when WE# and CE# are active. The
address and data needed to execute a command are latched
on the rising edge of WE# or CE# (whichever goes high
first). Standard microprocessor write timings are used.
Figures 13 and 14 illustrate WE# and CE# controlled write
operations.
4 COMMAND DEFINITIONS
When the V
status register, identifier codes, or blocks are enabled.
Placing V
and word/byte write operations.
Device operations are selected by writing specific
commands into the CUI. Table 4 defines these commands.
PP
=V
PPH1/2
PPH1/2
PP
, the CUI additionally controls block erasure
voltage V
on V
PP
PPLK
enables successful block erase
, Read operations from the
CC
=4.5V-5.5V and
Rev. 1.2

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