LH28F800BVE-BTL90 Sharp Electronics, LH28F800BVE-BTL90 Datasheet - Page 4

• Manufacturer Part Number: LH28F800BVE-BTL90
• Manufacturer: Sharp Electronics

Specifications of LH28F800BVE-BTL90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

■ Smart3 Technology
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Access Time
■ Operating Temperature
■ Optimized Array Blocking Architecture
■ Extended Cycling Capability
■ Enhanced Automated Suspend Options
SHARP’s LH28F800BVE-BTL90 Flash memory with Smart3 technology is a high-density, low-cost, nonvolatile, read/write
storage solution for a wide range of applications. LH28F800BVE-BTL90 can operate at V
Its low voltage operation capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, flexible voltage and extended cycling provide for highly flexible
component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal
solution for code + data storage applications. For secure code storage applications, such as networking, where code is either
directly executed out of flash or downloaded to DRAM, the LH28F800BVE-BTL90 offers two levels of protection: absolute
protection with V
code security needs.
The LH28F800BVE-BTL90 is manufactured on SHARP’s 0.35µm ETOX
standard package: the 48-lead TSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
sharp
2.7V-3.6V V
2.7V-3.6V or 11.4V-12.6V V
90ns(2.7V-3.6V)
0°C to +70°C
Two 4K-word Boot Blocks
Six 4K-word Parameter Blocks
Fifteen 32K-word Main Blocks
Bottom Boot Location
100,000 Block Erase Cycles
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
PP
at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their
CC
8M-BIT (1Mbit × 8 / 512Kbit × 16)
Smart3 Flash MEMORY
LH28F800BVE-BTL90
PP
LHF80V11
■ Enhanced Data Protection Features
■ Automated Word/Byte Write and Block Erase
■ Low Power Management
■ SRAM-Compatible Write Interface
■ Industry-Standard Packaging
■ ETOX
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened
Absolute Protection with V
Block Erase and Word/Byte Write Lockout
during Power Transitions
Boot Blocks Protection with WP#=V
Command User Interface
Status Register
Deep Power-Down Mode
Automatic Power Savings Mode Decreases
I
48-Lead TSOP
CC
TM*
TM*
in Static Mode
process technology. It come in industry-
Nonvolatile Flash Technology
CC
=2.7V-3.6V and V
PP
=GND
PP
=2.7V-3.6V.
Rev. 1.1
IL
2