LH28F800BVE-BTL90 Sharp Electronics, LH28F800BVE-BTL90 Datasheet - Page 12

• Manufacturer Part Number: LH28F800BVE-BTL90
• Manufacturer: Sharp Electronics

Specifications of LH28F800BVE-BTL90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. WP# set to V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
sharp
Refer to DC Characteristics. When V
X can be V
V
RY/BY# is V
the WSM is not busy, in block erase suspend mode (with word/byte write inactive), word/byte write suspend mode or
deep power-down mode.
RP# at GND±0.2V ensures the lowest deep power-down current.
See Section 4.2 for read identifier code data.
Command writes involving block erase or word/byte write are reliably executed when V
Block erase or word/byte write with V
Refer to Table 4 for valid D
Never hold OE# low and WE# low at the same timing.
A
PPH1/2
-1
set to V
Mode
Mode
voltages.
IL
IL
IL
or V
OL
or V
or V
when the WSM is executing internal block erase or word/byte write algorithms. It is High Z during when
IH
IH
IH
for control pins and addresses, and V
in byte mode (BYTE#=V
.
Notes
Notes
6,7,8
6,7,8
4,10
4,10
8,9
10
10
8
8
8
IN
during a write operation.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
RP#
V
V
V
V
V
V
IH
IH
IH
IH
IH
RP#
Table 3.1. Bus Operations(BYTE#=V
V
Table 3.2. Bus Operations(BYTE#=V
IH
IH
IH
IH
IH
HH
HH
HH
HH
HH
IL
PP
HH
HH
HH
HH
HH
IL
IH
or
or
or
or
or
or
or
or
or
or
≤V
<RP#<V
PPLK
CE#
V
V
V
V
V
X
IH
CE#
IL
IL
IL
IL
V
IL
V
V
V
V
, memory contents can be read, but not altered.
X
IL
IL
IH
IL
IL
).
HH
LHF80V11
produce spurious results and should not be attempted.
OE#
V
V
V
V
X
X
IH
IH
IL
IL
OE#
V
V
V
V
PPLK
X
X
IH
IH
IL
IL
WE#
V
V
V
V
or V
X
X
IH
IH
IH
IL
WE#
V
V
V
V
X
X
PPH1/2
IH
IH
IH
IL
Figure 4
Address
See
X
X
X
X
X
for V
IH
IL
Address
Figure 4
)
)
(1,2)
(1,2)
See
X
X
X
X
X
PP
. See DC Characteristics for V
V
X
X
X
X
X
X
PP
PP
V
=V
X
X
X
X
X
X
High Z
High Z
High Z
Note 5
DQ
PP
D
D
OUT
PPH1/2
IN
0-7
DQ
High Z
High Z
High Z
Note 5
D
DQ
High Z
High Z
High Z
High Z
High Z
and V
D
OUT
IN
0-15
X
8-15
CC
=2.7V-3.6V.
RY/BY#
RY/BY#
High Z
High Z
High Z
High Z
PPLK
Rev. 1.1
X
X
X
X
X
X
X
X
and
(3)
(3)
10