LH28F800BVE-BTL90 Sharp Electronics, LH28F800BVE-BTL90 Datasheet - Page 31

LH28F800BVE-BTL90

Manufacturer Part Number
LH28F800BVE-BTL90
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F800BVE-BTL90

Cell Type
NOR
Density
8Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20/19Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

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6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
NOTES:
1. Read timing characteristics during block erase and word/byte write operations are the same as during read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. If BYTE# switch during reading cycle, exist the regulations separately.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
sharp
AVAV
PHWL
ELWL
WLWH
PHHWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
QVSL
FVWH
WHFV
Sym.
Refer to AC Characteristics for read-only operations.
word/byte write success (SR.1/3/4/5=0).
PP
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
WP# V
BYTE# Setup to WE# Going High
BYTE# Hold from WE# High
PP
PP
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High Z
HH
HH
IH
IH
Setup to WE# Going High
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High Z
Hold from Valid SRD, RY/BY# High Z
PPH1/2
IN
and D
Parameter
(and if necessary RP# should be held at V
IN
for block erase or word/byte write.
V
CC
=2.7V-3.6V, T
LHF80V11
A
=0°C to +70°C
(1)
Notes
2,4
2,4
2,4
2
2
2
2
3
3
5
5
HH
) until determination of block erase or
Min.
100
100
100
90
10
50
50
50
10
30
50
90
1
0
0
0
0
0
0
Max.
100
Unit
Rev. 1.1
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
29

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