TE28F160S3100 Intel, TE28F160S3100 Datasheet - Page 5

no-image

TE28F160S3100

Manufacturer Part Number
TE28F160S3100
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F160S3100

Cell Type
NOR
Density
16Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7/3.3/5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
2M/1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TE28F160S3100
Manufacturer:
INT
Quantity:
3 500
Part Number:
TE28F160S3100
Manufacturer:
INT
Quantity:
3 500
Part Number:
TE28F160S3100
Manufacturer:
INTEL/英特尔
Quantity:
20 000
1.0
This datasheet contains 16- and 32-Mbit Word-
Wide
28F320S3) specifications. Section 1 provides a
flash memory overview. Sections 2, 3, 4, and 5
describe the memory organization and functionality.
Section 6 covers electrical specifications for
extended temperature product offerings.
1.1
The Word-Wide FlashFile memory family maintains
basic compatibility with Intel’s 28F016SA and
28F016SV. Key enhancements include:
They share a compatible Status Register, basic
software commands, and pinout. These similarities
enable a clean migration from the 28F016SA or
28F016SV. When upgrading, it is important to note
the following differences:
1.2
The Word-Wide FlashFile memory family provides
density upgrades with pinout compatibility for the
16-
performance memories arranged as 1 Mword and
2 Mwords of 16 bits or 2 Mbyte and 4 Mbyte of
8 bits. This data is grouped in thirty-two and sixty-
four 64-Kbyte blocks that can be erased, locked
and unlocked in-system. Figure 1 shows the block
diagram, and Figure 5 illustrates the memory
organization.
ADVANCE INFORMATION
Common Flash Interface (CFI) Support
Scaleable Command Set (SCS) Support
Low Voltage Technology
Enhanced Suspend Capabilities
Because of new feature and density options,
the devices have different manufacturer and
device identifier codes. This allows for software
optimization.
New software commands.
To take advantage of low voltage on the
28F160S3
connection
28F320S3 do not support a 12V V
and
INTRODUCTION
FlashFile
New Features
Product Overview
32-Mbit
TM
to
and
V
densities.
memory
CC
28F320S3,
.
The
They
(28F160S3
28F160S3
PP
allow
option.
are
high-
V
and
and
PP
This family of products are optimized for fast factory
programming and low power designs. Specifically
designed for 3V systems, the 28F160S3 and
28F320S3 support read operations at 2.7V–3.6V
Vcc with block erase and program operations at
2.7V–3.6V
performance is achieved through highly-optimized
write buffers. A 5V V
faster factory programming. For a simple low power
design, V
Additionally, the dedicated V
data protection when V
Internal
configures
operations.
A Common Flash Interface (CFI) permits OEM-
specified software algorithms to be used for entire
families of devices. This allows device-independent,
JEDEC
backward-compatible software support for the
specified flash device families. Flash vendors can
standardize their existing interfaces for long-term
compatibility.
Scaleable Command Set (SCS) allows a single,
simple software driver in all host systems to work
with all SCS-compliant flash memory devices,
independent
memory card, SIMM, or direct-to-board placement).
Additionally,
system/device data transfer rates and minimizes
device and system-level implementation costs.
A Command User Interface (CUI) serves as the
interface between the system processor and
internal
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit
configuration operations.
A block erase operation erases one of the device’s
64-Kbyte
independent of other blocks. Each block can be
independently erased 100,000 times. Block erase
suspend mode allows system software to suspend
block erase to read or write data from any other
block.
Data is programmed in byte, word or page
increments. Program suspend mode enables the
system to read data or execute code from any other
flash memory array location.
device
V
ID-independent,
CC
blocks
PP
and
the
of
and V
SCS
detection
operation.
system-level
5V
device
typically
PP
PP
PP
option is available for even
V
provides
PP
28F160S3, 28F320S3
can be tied to 2.7V.
V
.
circuitry
for
PPLK
PP
and
within
A
High
pin gives complete
.
packaging
optimized
valid
forward-
the
programming
automatically
t
WHQV2/EHQV2
command
highest
(e.g.,
write
and
5

Related parts for TE28F160S3100