SJEP120R100A SEMISOUTH, SJEP120R100A Datasheet - Page 5

• Manufacturer Part Number: SJEP120R100A
• Description: 58T5150
• Manufacturer: SEMISOUTH

Specifications of SJEP120R100A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 114W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

SJEP120R100A Rev1.1
The SGDR300P1 is a gate driver reference design available for purchase from SemiSouth. See applications note AN-SS2 for full circuit
description, test results, schematics, and bill of materials. Gerber files also available upon request.
300
250
200
150
100
E
50
s
0
Figure 13. Switching Energy Losses
= f(I
2
D
); V
Tj = 25
Tj = 150
DS
= 600V; GD = +15V/-10V, R
o
C
o
6
C
I
D
, Drain Current (A)
SGDR300P1
10
Figure 15. Gate Driver & Switching Test Circuit
Figure 16. Test Circuit & Test Conditions
14
GEXT
= 5ohm
E
E
E
TS
OFF
ON
18
PRELIMINARY
5/8
E
s
Figure 14. Switching Energy Losses
600
500
400
300
200
100
= f(R
0
Test Conditions
0
GEXT
Single Device configuration
V
RC snubber: R= 22 and C = 4.7nF
400uH load inductance
Each device driven by separate SGD300P1
Gate driver approx. 5mm from gate terminal
3.3nF gate-source capacitive clamp
Tj = 25
Tj = 150
DD
); V
Rg
= 600V, I
DS
EXT
= 600V; I
o
10
, External Gate Resistance, ( )
C
o
C
SJEP120R100A
LPK
D
Silicon Carbide
= 12A, T
= 12A, GD = +15V/-10V
20
A
= 25
30
o
C
June 2011
E
E
E
OFF
ON
TS
40