SJEP120R100A SEMISOUTH, SJEP120R100A Datasheet - Page 2

• Manufacturer Part Number: SJEP120R100A
• Description: 58T5150
• Manufacturer: SEMISOUTH

Specifications of SJEP120R100A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 114W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

Off Characteristics
Drain-Source Blocking Voltage
Total Drain Leakage Current
Total Gate Reverse Leakage
On Characteristics
Drain-Source On-resistance
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related
Switching Characteristics
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ELECTRICAL CHARACTERISTICS
SJEP120R100A Rev1.1
Parameter
Symbol
R
R
V
I
BV
C
GFWD
C
I
I
C
C
Q
DS(on)
E
E
E
E
Q
GS(th)
R
G(ON)
GSS
E
E
Q
DSS
t
t
t
t
o(er)
on
t
off
t
on
t
off
t
oss
iss
rss
on
off
on
off
r
r
gs
gd
G
f
ts
f
ts
DS
g
V
V
See Figure 15 and application note for
See Figure 15 and application note for
DS
DS
f = 1 MHz, drain-source shorted
= 1200 V, V
V
V
V
= 1200 V, V
gate drive recommendations
gate drive recommendations
DS
DS
V
Inductive Load, T
GS
Gate Driver = +15V, -10V,
Gate Driver = +15V, -10V,
V
Inductive Load, T
V
V
V
GS
I
I
V
V
GS
GS
= 1200 V, V
= 1200 V, V
D
D
V
DS
DS
= -10 V, VDS = 1200V
DS
DS
DS
= 12 A, V
= 12 A, V
>2.7V; See Figure 5
PRELIMINARY
= -10 V, VDS = 0V
= 0 V, I
V
= 600 V, I
Conditions
= 1 V, I
= 600 V, I
= 600 V, I
V
T
= 0 V to 600 V,
Tj = 150
GS
T
V
Tj = 25
V
DD
j
j
2/8
= 125 ° C
GS
GS
= 25 ° C
= + 2.5 V
GS
= 100 V
GS
= 3 V
= 0 V
D
D
= 0 V, Tj = 150
GS
GS
= 0 V, Tj = 25
= 600 µA
D
D
GS
o
GS
= 34 mA
o
C
D
J
C
= 12 A,
= 12 A,
J
= 3 V,
= 3 V,
= 150
= 5 A,
< -10 V,
< -10 V,
= 25
o
o
C
C
o
o
C
C
1200
0.75
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SJEP120R100A
Silicon Carbide
Value
Typ
0.08
0.20
1.00
100
300
-0.1
-0.1
220
670
103
155
176
0.5
10
97
60
10
12
30
25
68
87
10
15
30
25
82
94
30
24
1
8
1
-
Max
1.25
-0.3
600
0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
June 2011
Unit
mA
mA
nC
µA
pF
ns
µJ
ns
µJ
V
V