BAV23C NXP Semiconductors, BAV23C Datasheet - Page 6

• Manufacturer Part Number: BAV23C
• Description: 58T1332
• Manufacturer: NXP Semiconductors

Specifications of BAV23C

• Diode Type: Fast Recovery
• Repetitive Reverse Voltage Vrrm Max: 250V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 9A
• Rohs Compliant: Yes

NXP Semiconductors
8. Test information
BAV23_SER_7
Product data sheet
Fig 4.
Fig 6.
(pF)
V = V
(1) I
C
1.0
0.8
0.6
0.4
0.2
d
R
S
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
Reverse recovery time test circuit and waveforms
0
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
2
amb
= 25 C
I
4
F
D.U.T.
6
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
V
mga881
R
SAMPLING
mbg447
R
(V)
i
= 50
Rev. 07 — 19 March 2010
8
Ω
V
R
Fig 5.
t
10 %
r
(mA)
I
(1) Single diode loaded.
(2) Double diode loaded.
90 %
F
300
200
100
0
input signal
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curves
t
p
(1)
(2)
Dual high-voltage switching diodes
50
t
100
BAV23 series
+ I
F
output signal
150
© NXP B.V. 2010. All rights reserved.
T
amb
006aab214
t rr
(°C)
200
(1)
t
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