BAV23C NXP Semiconductors, BAV23C Datasheet - Page 5

• Manufacturer Part Number: BAV23C
• Description: 58T1332
• Manufacturer: NXP Semiconductors

Specifications of BAV23C

• Diode Type: Fast Recovery
• Repetitive Reverse Voltage Vrrm Max: 250V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 9A
• Rohs Compliant: Yes

NXP Semiconductors
BAV23_SER_7
Product data sheet
Fig 1.
Fig 3.
(mA)
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
F
600
400
200
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.4
0.8
(1)
(μA)
I
R
10
10
10
10
10
10
10
−1
−2
−3
−4
−5
1.2
1
(2)
(3)
(4)
2
0
All information provided in this document is subject to legal disclaimers.
V
006aab212
F
(V)
50
1.6
Rev. 07 — 19 March 2010
(3)
(1)
(2)
(4)
100
Fig 2.
150
I
FSM
(A)
10
10
10
−1
1
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
200
j
= 25 C; prior to surge
006aab213
V
R
(V)
250
Dual high-voltage switching diodes
10
10
BAV23 series
2
10
© NXP B.V. 2010. All rights reserved.
3
t
p
(μs)
mbg703
10
4
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