M25PE16-VMW6G Micron Technology Inc, M25PE16-VMW6G Datasheet - Page 6

• Manufacturer Part Number: M25PE16-VMW6G
• Manufacturer: Micron Technology Inc

Specifications of M25PE16-VMW6G

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

Description
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Description
The M25PE16 is a 16-Mbit (2 Mbits × 8) serial paged flash memory accessed by a high
speed SPI-compatible bus.
The memory can be written or programmed 1 to 256 bytes at a time, using the page write or
page program instruction. The page write instruction consists of an integrated page erase
cycle followed by a page program cycle.
The memory is organized as 32 sectors that are further divided up into 16 subsectors each
(512 subsectors in total). Each sector contains 256 pages and each subsector contains 16
pages. Each page is 256-byte wide. Thus, the whole memory can be viewed as consisting
of 8192 pages, or 2,097,152 bytes.
The memory can be erased a page at a time, using the page erase instruction, a subsector
at a time, using the subsector erase instruction, a sector at a time, using the sector erase
instruction, or as a whole, using the bulk erase instruction.
The memory can be write protected by either hardware or software using mixed volatile and
non-volatile protection features, depending on the application needs. The protection
granularity is of 64 Kbytes (sector granularity).
M25PE16