M25PE16-VMW6G Micron Technology Inc, M25PE16-VMW6G Datasheet - Page 49

• Manufacturer Part Number: M25PE16-VMW6G
• Manufacturer: Micron Technology Inc

Specifications of M25PE16-VMW6G

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

M25PE16
Table 18.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
4. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
5.
Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
PW
CH
SLCH
CHSL
SHSL
DP
t
CL
PP
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
SSE
t
CH
int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
t
f
f
PE
SE
BE
W
C
R
(1)
(1)
(2)
(4)
(4)
(2)
+ t
(2)
(3)
(3)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
CLH
CLL
DIS
HO
f
DH
t
C
AC characteristics (50 MHz operation)
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
Clock frequency for read instructions
Clock high time
Clock low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock low to output valid
Output hold time
Write protect setup time
Write protect hold time
S to deep power-down
S High to standby mode
Write status register cycle time
Page write cycle time (256 bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Subsector erase cycle time
Bulk erase cycle time
Test conditions specified in
(2)
Parameter
(peak to peak)
C
.
Table 14
Min.
D.C.
D.C.
100
100
0.1
50
9
9
5
5
2
5
5
5
0
and
Table 15
int(n/8) × 0.025
Typ.
0.8
11
10
50
25
3
1
DC and AC parameters
(5)
Max.
150
50
33
30
15
23
20
60
8
8
3
3
5
MHz
MHz
V/ns
Unit
49/58
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
s