BUK9508-55B NXP Semiconductors, BUK9508-55B Datasheet - Page 9

• Manufacturer Part Number: BUK9508-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9508-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 123 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9508-55B,127

NXP Semiconductors
BUK9508-55B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
10
V
DD
= 14 V
20
30
V
(A)
I
S
DD
100
75
50
25
0
= 44 V
0.0
40
All information provided in this document is subject to legal disclaimers.
Q
G
03nn48
(nC)
T
50
j
Rev. 03 — 15 June 2010
= 175 °C
0.5
Fig 14. Input, output and reverse transfer capacitances
T
j
(pF)
= 25 °C
1.0
C
6000
4000
2000
0
10
as a function of drain-source voltage; typical
values
V
−2
SD
(V)
03nn47
N-channel TrenchMOS logic level FET
1.5
10
−1
C oss
C rss
C iss
BUK9508-55B
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nn54
(V)
10
2
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