BUK9508-55B NXP Semiconductors, BUK9508-55B Datasheet - Page 8

• Manufacturer Part Number: BUK9508-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9508-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 123 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9508-55B,127

NXP Semiconductors
BUK9508-55B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(m Ω )
DSon
(A)
I
100
D
75
50
25
30
20
10
0
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
3 3.2
50
1
3.4
T
100
3.6
j
= 175 ° C
3.8
2
4
150
Label is V
T
j
10
5
= 25 ° C
3
200
All information provided in this document is subject to legal disclaimers.
V
GS
GS
I
D
03nn53
03nn50
(V)
(A)
(V)
250
4
Rev. 03 — 15 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
2.0
1.5
1.0
0.5
1.5
0.5
a
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9508-55B
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03ng52
180
180
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