NOII5SC1300A-QDC ON Semiconductor, NOII5SC1300A-QDC Datasheet - Page 8

• Manufacturer Part Number: NOII5SC1300A-QDC
• Manufacturer: ON Semiconductor

Specifications of NOII5SC1300A-QDC

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Electro-voltaic Response Curve
Figure 7
pixel and the output signal. The resulting voltage-electron curve is independent of any parameters (integration time, and others). The
voltage to electrons conversion gain is 17.6 µV/electron.
NOII5FM1300A:
The NOII5FM1300A is processed on a thicker epitaxial silicon featuring higher sensitivity in the NIR (Near Infra Red) wavelengths
(700–900 nm). The spectral response curves, highlighting the difference between IBIS5-1300 using the standard process and thicker
epitaxial layer process are shown in
NOII5FM1300A sensor has a significant sensitivity advantage in the NIR domain.
A drawback of the thicker epitaxial layer is a slight performance decrease in MTF (Modular Transfer Function or electrical pixel to pixel
cross-talk) as indicated in
Table 7. MTF Comparison
The resulting image sharpness is hardly affected by this decreased MTF value. Both IBIS5-1300 versions are fully pin compatible and
have identical timing and biasing.
Horizontal
Horizontal
Horizontal
Horizontal
Vertical
Vertical
Vertical
Vertical
Direction
shows the pixel response curve in linear response mode. This curve is the relation between the electrons detected in the
600
700
800
900
600
700
800
900
Wavelength
Table
1,2
0,8
0,6
0,4
0,2
1
0
0.58
0.53
7.
0
NOII5SM1300A
Figure 6
10000
Figure 7. Electro-Voltaic Response Curve
on page 7. Various machine vision applications use light sources in the NIR, hence the
Rev. 9 | www.onsemi.com | Page 8 of 34
20000
NOII5FM1300A
0.37
0.18
0.16
0.07
0.26
0.16
0.13
0.11
30000
# electrons
40000
50000
60000
70000
80000
NOII5SM1300A