SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet - Page 3

• Manufacturer Part Number: SJEP120R063
• Description: JFET, SIC, N-OFF, 1200V, 30A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063

• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Continuous Drain Current Id: 30A

May 2009
80
70
60
50
40
30
20
10
24
21
18
15
12
1.00
0.80
0.60
0.40
0.20
0.00
0
9
6
3
0
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
0
0
1.5
Figure 5. Gate-Source Current
I
12
10
I
D
D
8
6
4
2
0
= f(V
= f(V
2
1
V
V
V
I
3
DS
DS
GS
DS
DS
GS
175
); T
, Drain-Source Voltage (V)
, Drain-Source Voltage (V)
); T
= f(V
, Gate-Source Voltage (V)
4
o
25
2
2
C
j
2.0
j
= 175 ° C; parameter: V
o
= 25 ° C; parameter: V
C
GS
5
); parameter: T
6
3
4
4
2.5
j
GS
175
GS
25
5
3.0 V
2.5 V
1.5 V
o
o
C
2.0 V
1.5 V
2.5 V
3.0 V
2.0 V
C
3.0
6
6
PRELIMINARY
Rev 1.3
Figure 4. Typical Transfer Characteristics
Figure 2. Typical Output Characteristics
Figure 6. Drain-Source On-resistance
60
50
40
30
20
10
40
35
30
25
20
15
10
0
5
0
0.00
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
I
R
D
DS(on)
= f(V
0
0.50
DS
= f(I
I
V
); T
D
V
GS
= f(V
D
DS
); V
j
, Gate-Source Voltage (V)
1.00
10
= 125 ° C; parameter: V
, Drain-Source Voltage (V)
2
GS
GS
I
D
SJEP120R063
, Drain Current (A)
); V
= 3.0; parameter: Tj
Silicon Carbide
1.50
DS
= 5 V
20
150
2.00
o
C
4
GS
30
2.50
125
2.0 V
1.5 V
25
3.0 V
2.5 V
o
C
o
3.00
C
6
40
3/7