SJEP120R063 SEMISOUTH, SJEP120R063 Datasheet - Page 2

• Manufacturer Part Number: SJEP120R063
• Description: JFET, SIC, N-OFF, 1200V, 30A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063

• Transistor Type: JFET
• Breakdown Voltage Vbr: 1200V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Rohs Compliant: Yes
• Continuous Drain Current Id: 30A

Off Characteristics
Drain-Source Blocking Voltage
Total Drain Leakage Current
Total Gate Reverse Leakage
On Characteristics
Drain-Source On-resistance
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related
Switching Characteristics
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ELECTRICAL CHARACTERISTICS
May 2009
Parameter
Symbol
R
V
R
I
BV
C
GFWD
C
I
I
C
C
E
E
E
E
Q
Q
DS(on)
GS(th)
R
G(ON)
E
E
DSS
GSS
t
t
t
t
Q
o(er)
t
t
on
off
t
on
off
t
oss
rss
iss
on
off
on
off
gd
r
f
ts
r
f
ts
gs
G
DS
g
V
V
See Figure 15 and application note for
See Figure 15 and application note for
DS
DS
f = 1 MHz, drain-source shorted
= 1200 V, V
V
V
= 1200 V, V
V
gate drive recommendations
gate drive recommendations
DS
DS
V
V
GS
Inductive Load, T
Gate Driver = +15V, -10V,
Gate Driver = +15V, -10V,
V
V
Inductive Load, T
V
GS
GS
I
I
V
V
GS
DS
= 1200 V, V
= 1200 V, V
D
D
V
DS
= -15 V, VDS = 1200V
DS
DS
DS
>2.7V; See Figure 5
= 12 A, V
= 12 A, V
= 0 V, I
PRELIMINARY
= 600 V, I
= -15 V, VDS = 0V
Rg
Rg
V
= 1 V, I
Conditions
= 600 V, I
= 600 V, I
Rev 1.3
V
T
= 0 V to 480 V,
Tj = 175
GS
T
V
V
Tj = 25
DD
EXT
EXT
j
j
GS
GS
= 125 ° C
= 25 ° C
= + 2.5 V
GS
= 100 V
GS
= 2.5ohm
= 2.5ohm
= 3 V
= 0 V
D
D
= 0 V, Tj = 175
= 1200 µA
= 0 V, Tj = 25
GS
GS
o
D
D
GS
GS
= 34 mA
D
o
C
C
J
= 24 A,
= 24 A,
= 3 V,
= 3 V,
J
= 10 A,
= 150
< -15 V,
< -15 V,
= 25
o
o
C
C
o
o
C
C
1200
0.75
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SJEP120R063
Silicon Carbide
Value
0.045
1220
Typ
0.11
1.00
0.25
200
600
-0.2
-0.2
400
180
169
100
160
280
440
180
280
460
20
15
12
35
30
15
15
35
30
60
49
2
4
2
-
0.063
1200
Max
1.25
-0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mA
mA
µA
nC
pF
ns
uJ
ns
uJ
V
V
2/7