HTMS8001FTK/AF,115 NXP Semiconductors, HTMS8001FTK/AF,115 Datasheet - Page 7

no-image

HTMS8001FTK/AF,115

Manufacturer Part Number
HTMS8001FTK/AF,115
Description
RFID HITAG TRANSPONDER 2HVSON
Manufacturer
NXP Semiconductors
Datasheet

Specifications of HTMS8001FTK/AF,115

Function
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NXP Semiconductors
6. Mechanical specification
152931
Product data sheet
PUBLIC
6.1.1 Wafer
6.1.2 Wafer backside
6.1.3 Chip dimensions
6.1.4 Passivation on front
6.1 Wafer specification
See
Designation:
Diameter:
Thickness:
Process:
Batch size:
PGDW:
Material:
Treatment:
Roughness:
Die size without scribe:
Scribe line width:
X-dimension:
Y-dimension:
Number of pads:
Type:
Material:
Thickness:
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die
Rev. 3.1 — 21 January 2010
152931
each wafer is scribed with batch number and
wafer number
200 mm (8”)
150 μm ± 15 μm
CMOS 0.14 µm
25 wafers
91981
Si
ground and stress release
R
550 μm x 550 μm = 302500 μm
15 μm (scribe line width is measured between
nitride edges)
15 μm (scribe line width is measured between
nitride edges)
5
sandwich structure
PE-Nitride (on top)
1.75 μm total thickness of passivation
a
max. 0.5 μm, R
t
max. 5 μm
© NXP B.V. 2010. All rights reserved.
HITAG µ
2
Transponder IC
marking”.
7 of 58

Related parts for HTMS8001FTK/AF,115