MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 80

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 35:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
V
V
Nominal Slew Rate and
V
V
IL
IL
IH
IH
(
(
DC
DC
(
(
AC
DC
V
Notes:
) MAX
) MAX
REF
DQS#
) MIN
) MIN
V
DQS
CK#
DD
(
V
Setup slew rate
CK
DC
Q
SS
falling signal
)
1. Both the clock and the strobe are drawn on different time scales.
V
REF
region
to AC
ΔTF
=
V
REF
t
VAC for
(
DC
) - V
t IS
ΔTF
t VAC
IL
(
slew rate
Nominal
AC
t
) MAX
IS (Command and Address – Clock)
t IH
80
Setup slew rate
Micron Technology, Inc., reserves the right to change products or specifications without notice.
rising signal
ΔTR
1Gb: x4, x8, x16 DDR3 SDRAM
t VAC
t IS
=
slew rate
Nominal
V
V
IH
REF
region
(
AC
t IH
to AC
) MIN - V
©2006 Micron Technology, Inc. All rights reserved.
ΔTR
Speed Bin Tables
REF
(
DC
)