MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 45

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 21: Definition of Differential AC-Swing and
Table 26:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Allowed Time Before Ringback (
Below V
IL
(
AC
)
V
V
V
V
ILDIFF
ILDIFF
IHDIFF
IHDIFF
V
V
ILDIFF
IHDIFF
(
(
DC
AC
(
(
AC
DC
Slew Rate (V/ns)
(MAX)
) MAX
) MAX
(MIN)
) MIN
) MIN
0.0
>4.0
<1.0
4.0
3.0
2.0
1.9
1.6
1.4
1.2
1.0
t DVAC
half cycle
t
DVAC) for CK - CK# and DQS - DQS#
45
t
DVAC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
350mV
t
DVAC (ps) at |V
DQS - DQS#
75
57
50
38
34
29
22
13
0
0
CK - CK#
1Gb: x4, x8, x16 DDR3 SDRAM
t DVAC
IHDIFF
©2006 Micron Technology, Inc. All rights reserved.
(
AC
)/V
ILDIFF
300mV
175
170
167
163
162
161
159
155
150
150
(
AC
)|