MT41J256M4JP-125:G Micron Technology Inc, MT41J256M4JP-125:G Datasheet - Page 154

• Manufacturer Part Number: MT41J256M4JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J256M4JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 101: Power-Down Entry After READ or READ with Auto Precharge (RDAP)
Figure 102: Power-Down Entry After WRITE
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_4.fm - Rev. F 11/08 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
DQ BC4
Address
DQ BL8
DQ BC4
DQ BL8
CKE
CK#
CK#
CKE
CK
CK
READ/
Valid
WRITE
RDAP
Valid
T0
T0
NOP
NOP
T1
T1
Notes:
WL = AL + CWL
RL = AL + CL
NOP
NOP
Ta0
Ta0
1. CKE can go LOW 2
NOP
Ta1
Ta1
NOP
NOP
Ta2
NOP
Ta2
DI
DI
n
n
t RDPDEN
DI
DI
n
n
n + 1
n + 1
DI
DI
n + 1
n + 1
DI
DI
n + 2
n + 2
NOP
Ta3
NOP
DI
Ta3
DI
t WRPDEN
n + 2
n + 2
DI
t
DI
CK earlier if BC4MRS.
n + 3
n + 3
DI
DI
n + 3
n + 3
DI
DI
n + 4
NOP
Ta4
NOP
DI
Ta4
n + 4
DI
n + 5
DI
154
n+ 5
DI
n + 6
Ta5
NOP
DI
NOP
Ta5
n + 6
DI
n + 7
DI
n + 7
DI
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Ta6
Ta6
NOP
self refresh entry
Power-down or
t IS
Ta7
NOP
NOP
Ta7
1Gb: x4, x8, x16 DDR3 SDRAM
t CPDED
t WR
Indicates A Break In
Time Scale
Indicates A Break in
Time Scale
Tb0
NOP
NOP
Ta8
self refresh entry 1
Power-down or
t IS
Tb1
NOP
Ta9
©2006 Micron Technology, Inc. All rights reserved.
t CPDED
Transitioning Data
t PD
Transitioning Data
NOP
Tb2
Ta10
t PD
Operations
Tb3
Ta11
Don’t Care
Don’t Care
Tb4
Ta12