MT46V32M16CY-5B:J Micron Technology Inc, MT46V32M16CY-5B:J Datasheet - Page 82
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MT46V32M16CY-5B:J
Manufacturer Part Number
MT46V32M16CY-5B:J
Description
IC SDRAM 512MB 200MHZ 60FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT46V32M16P-5BJ.pdf
(93 pages)
Specifications of MT46V32M16CY-5B:J
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V32M16CY-5B:J
Manufacturer:
MICRON
Quantity:
1 156
Company:
Part Number:
MT46V32M16CY-5B:J
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46V32M16CY-5B:J
Manufacturer:
MICRON/美光
Quantity:
20 000
Figure 46:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
Command
Address
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Uninterrupting
Notes:
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4.
5. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
t
and WRITE commands may be to different devices, in which case
the PRECHARGE command could be applied earlier.
DI
b
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
DI
T1
b
DI
b
T1n
NOP
T2
T2n
82
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
NOP
T4
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
(a or all)
Bank,
T5
PRE
©2000 Micron Technology, Inc. All rights reserved.
t
WR is not required, and
t RP
T6
NOP
Operations
Don’t Care