MT46V32M16CY-5B:J Micron Technology Inc, MT46V32M16CY-5B:J Datasheet - Page 51
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MT46V32M16CY-5B:J
Manufacturer Part Number
MT46V32M16CY-5B:J
Description
IC SDRAM 512MB 200MHZ 60FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT46V32M16P-5BJ.pdf
(93 pages)
Specifications of MT46V32M16CY-5B:J
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V32M16CY-5B:J
Manufacturer:
MICRON
Quantity:
1 156
Company:
Part Number:
MT46V32M16CY-5B:J
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46V32M16CY-5B:J
Manufacturer:
MICRON/美光
Quantity:
20 000
READ
Figure 19:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
READ Command
Note:
The READ command is used to initiate a burst read access to an active row, as shown in
Figure 19 on page 51. The value on the BA0, BA1 inputs selects the bank, and the address
provided on inputs A0–Ai (where Ai is the most significant column address bit for a given
density and configuration, see Table 2 on page 2) selects the starting column location.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
A10
EN AP = enable auto precharge; DIS AP = disable auto precharge.
CK
HIGH
DIS AP
EN AP
Bank
Col
Don’t Care
51
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands