6ED003L06FXT Infineon Technologies, 6ED003L06FXT Datasheet - Page 12

• Manufacturer Part Number: 6ED003L06FXT
• Manufacturer: Infineon Technologies

Specifications of 6ED003L06FXT

• Lead Free Status / Rohs Status: Compliant

Note 1: There is an additional power dissipation for input voltages above the clamping voltage. In series to clamping diode there is a
limiting resistor of 55Ω (see also Fig.3)
Datasheet
V
Symbol
R
R
IN
I
I
I
I
ON
I
I
I
I
ITRIP+
I
I
QCC1
QCC2
QCC3
I
I
QBS1
QBS2
ON
RCIN
,
HIN+
I
LIN+
HIN-
LIN-
EN+
I
CLAMP
O+
O-
,
RCIN
,
FLT
(Note 1)
charging in range from 3V(20%) to 6V(40%)
Mean output current for load capacity
discharging in range from 12V(80%) to
9V(60%)
RCIN low on resistance of the pull down
transistors
FAULT low on resistance of the pull down
transistors
Quiescent V
Quiescent V
Quiescent V
Quiescent V
Quiescent V
Input clamp voltage (/HIN, /LIN, EN, ITRIP)
Input bias current
Input bias current
Input bias current
Input bias current
Input bias current (ITRIP=high)
Input bias current (EN=high)
Input bias current RCIN (internal current
source)
Mean output current for load capacity
BS
BS
CC
CC
CC
supply current (VB only)
supply current (VB only)
supply current (VCC only)
supply current (VCC only)
supply current (VCC only)
Definition
12
Min.
120
250
9.0
-
-
-
-
-
-
-
-
-
-
-
-
Integrated 3 Phase Gate Driver
Typ.
10.6
300
360
110
110
142
410
0.6
1.1
0.9
2.8
52
52
70
69
47
54
Max.
120
500
550
100
200
100
200
120
100
100
1.6
1.6
13
1
-
-
Unit
mA
mA
mA
mA
µA
Ω
V
6ED003L06-F
V
Rev. 2, Dec 2008
V
Test Conditions
LIN
LIN
V
V
V
V
=0V, V
V
=5V, V
V
HO=high
C
C
FAULT
ENABLE
HO=low
I
V
V
RCIN
RCIN
V
V
LIN
IN
ITRIP
L
L
HIN
HIN
LIN
LIN
=10nF
=10nF
=4mA
=float.
=0.5V
=5V
=0V
=5V
=0V
=0.5V
= 2 V
=5V
=5V
HIN
HIN
=5V,
=0V