M29W320DT90N6 Micron Technology Inc, M29W320DT90N6 Datasheet - Page 21

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M29W320DT90N6

Manufacturer Part Number
M29W320DT90N6
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29W320DT90N6

Cell Type
NOR
Density
32Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Top
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6/12V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

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4.11
4.12
Erase Resume command
The Erase Resume command must be used to restart the Program/Erase Controller after an
Erase Suspend. The device must be in Read Array mode before the Resume command will
be accepted. An erase can be suspended and resumed more than once.
Block Protect and Chip Unprotect commands
Each block can be separately protected against accidental Program or Erase. The whole
chip can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are described in
Appendix C: Block
Protection.
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