LMH6559MF National Semiconductor, LMH6559MF Datasheet - Page 2

• Manufacturer Part Number: LMH6559MF
• Description: IC, CLOSED LOOP BUFF SGL 1.75GHZ SOT23-5
• Manufacturer: National Semiconductor

Specifications of LMH6559MF

• No. Of Amplifiers: 1
• Gain Bandwidth: 1.75GHz
• Slew Rate: 4580V/µs
• Supply Voltage Range: 3V To 10V
• Output Current: 75mA
• Amplifier Output: Single Ended
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: No

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Frequency Domain Response
SSBW
GFN
FPBW
DG
DP
Time Domain Response
t
t
t
OS
SR
Distortion And Noise Performance
HD2
HD3
THD
e
CP
SNR
Static, DC Performance
A
V
TC V
I
TC I
r
f
s
B
Symbol
n
CL
OS
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Unless otherwise specified, all limits guaranteed for T
Boldface limits apply at the temperature extremes.
±
ESD Tolerance (Note 2)
Human Body Model
Machine Model
Output Short Circuit Duration
Supply Voltage (V
Voltage at Input/Output Pins
Soldering Information
5V Electrical Characteristics
B
Infrared or Convection (20 sec.)
OS
Small Signal Bandwidth
Gain Flatness
Full Power Bandwidth (−3dB)
Differential Gain
Differential Phase
Rise Time
Fall Time
Settling Time to
Overshoot
Slew Rate
2
3
Total Harmonic Distortion
Input-Referred Voltage Noise
1dB Compression point
Signal to Noise Ratio
Small Signal Voltage Gain
Input Offset Voltage
Temperature Coefficient Input
Offset Voltage
Input Bias Current
Temperature Coefficient Input
Bias Current
nd
rd
Harmonic Distortion
Harmonic Distortion
+
– V
Parameter
−
<
)
±
0.1dB
0.1%
V
+
(Note 3), (Note 4)
+0.8V, V
V
V
V
R
f = 3.58 MHz
R
f = 3.58 MHz
3.3V Step (20-80%)
3.3V Step
1V Step
(Note 10)
V
V
V
f = 1MHz
f = 10MHz
f
V
V
R
V
R
(Note 11)
(Note 9)
(Note 11)
(Note 1)
O
O
O
O
O
O
>
O
O
O
L
L
L
L
= 150Ω to 0V,
= 150Ω to 0V,
= 100Ω to 0V
= 2kΩ to 0V
= 2V
= 2V
= 2V
= 2V
= 350mVrms
= 100mV
= 100mV
<
<
100kHz, BW = 5MHz,
−
2000V
0.5V
0.5V
235˚C
−0.8V
200V
J
13V
PP
PP
PP
PP
= 25˚C, V
PP
PP
, f = 20MHz
, f = 20MHz
, f = 20MHz
Conditions
(+10dBm)
PP
PP
2
+
= +5V, V
Operating Ratings
Storage Temperature Range
Junction Temperature
Supply Voltage (V
Temperature Range (Notes 5, 6)
Package Thermal Resistance (Notes 5, 6)
Wave Soldering (10 sec.)
8-Pin SOIC
5-Pin SOT23
−
= −5V, V
(Note 8)
Min
−10
−14
+
.97
.99
O
- V
= V
−
)
CM
(Note 7)
= 0V and R
1750
1050
4580
0.06
0.02
.996
.998
−3.6
Typ
200
−58
−53
−52
+23
0.4
0.5
5.7
89
23
−3
(Note 1)
9
4
3
L
(Note 8)
−65˚C to +150˚C
= 100Ω to 0V.
Max
20
25
−40˚C to +85˚C
172˚C/W
235˚C/W
+150˚C
3 - 10V
nV/
260˚C
Units
µV/˚C
nA/˚C
MHZ
MHz
MHz
dBm
V/µs
dBc
dBc
dBc
deg
V/V
mV
dB
µA
ns
ns
ns
%
%