LMH6559MF National Semiconductor, LMH6559MF Datasheet
LMH6559MF
Specifications of LMH6559MF
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LMH6559MF Summary of contents
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... The device is fabricated on National’s high-speed VIP10 process using National’s proven high performance circuit architectures. Typical Schematic © 2006 National Semiconductor Corporation Features n Closed-loop buffer n 1750MHz small signal bandwidth n 4580V/µs slew rate n 0.06% / 0.02˚ differential gain/phase n − ...
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... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 2) Human Body Model Machine Model Output Short Circuit Duration + − Supply Voltage (V – Voltage at Input/Output Pins Soldering Information Infrared or Convection (20 sec.) ± ...
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Electrical Characteristics Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes. Symbol Parameter R Output Resistance OUT PSRR Power Supply Rejection Ratio I Supply Current S Miscellaneous Performance R Input Resistance IN ...
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Electrical Characteristics Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes. Symbol Parameter CP 1dB Compression point SNR Signal to Noise Ratio Static, DC Performance A Small Signal Voltage Gain CL V Input ...
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Electrical Characteristics Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes. Symbol Parameter FPBW Full Power Bandwidth (−3dB) Time Domain Response t Rise Time r t Fall Time f ± t Settling Time ...
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... Note 11: Average Temperature Coefficient is determined by dividing the change in a parameter at temperature extremes by the total temperature change. Connection Diagrams 8-Pin SOIC Top View Ordering Information Package Part Number 8-Pin SOIC LMH6559MA LMH6559MAX 5-Pin SOT23 LMH6559MF LMH6559MFX www.national.com (Continued) + − = 25˚ Conditions (Note 8) Sourcing ...
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Typical Performance Characteristics fied. Frequency Response Gain Flatness Differential Gain and Phase + 25˚ +5V Frequency Response Over Temperature 20064101 Differential Gain and Phase 20064102 Transient Response Positive 20064104 7 − = −5V; ...
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Typical Performance Characteristics specified. (Continued) Transient Response Negative Transient Response Negative for Various V Harmonic Distortion vs. V www.national.com 25˚ Transient Response Positive for Various V 20064108 Harmonic Distortion vs. V SUPPLY 20064105 @ 10MHz ...
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Typical Performance Characteristics specified. (Continued) THD vs. V for Various Frequencies OUT Linearity V vs. V OUT V vs. V for Unit 1 OS SUPPLY + 25˚ 20064111 IN 20064112 20064123 9 − = +5V; ...
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Typical Performance Characteristics specified. (Continued) V vs. V for Unit 3 OS SUPPLY R vs. Frequency OUT I vs. V SUPPLY SUPPLY www.national.com + 25˚ +5V vs 20064125 PSRR vs. ...
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Typical Performance Characteristics specified. (Continued) V vs. I Sinking OUT OUT I Sinking vs SUPPLY Small Signal Pulse Response + 25˚ +5V OUT 20064128 I Sourcing vs 20064131 ...
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Typical Performance Characteristics specified. (Continued) Large Signal Pulse Response www.national.com + 25˚ +5V Large Signal Pulse Response S 20064119 12 − = −5V; Unless otherwise @ V = 10V ...
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Application Notes USING BUFFERS A buffer is an electronic device delivering current gain but no voltage gain used in cases where low impedances need to be driven and more drive current is required. Buffers need a flat frequency ...
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Application Notes (Continued) FIGURE 4. Z can be calculated by knowing some of the physical di- 0 mensions of the pcb line, such as pcb thickness, width of the trace and e , relative dielectric constant. The formula given in ...
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Application Notes (Continued) The voltage wavefront of 2.45V will now set about traveling back over the transmission line towards the source, thereby resulting in a reflection caused by the mismatch. On the other hand if the load is less then ...
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Application Notes (Continued) this moment the voltage in the whole transmission line has the nominal value of 2V (see Figure 6 trace E). If the three transmission lines each have a different length the particular point in time at which ...
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Application Notes (Continued) FIGURE 10. To minimize peaking due series resistor for the purpose of isolation from the output stage should be used. A low valued resistor will minimize the influence of such a load capacitor. In ...
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Application Notes (Continued) FIGURE 13. This effect works to both sides because the circuit will not generate radiation but the circuit is also not sensible if ex- posed to a certain radiation level. The same is also notice- able when ...
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Application Notes (Continued) Discontinuities In A Ground Plane A ground plane with traces routed over this plane results in the build electric field between the trace and the ground plane as seen in Figure 13. This field ...
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... LMH6559MA SOIC-8 LMH6559MAX SOIC-8 LMH6559MF SOT23-5 LMH6559MFX SOT23-5 These free evaluation boards are shipped when a device sample request is placed with National Semiconductor. POWER SEQUENCING OF THE LMH6559 Caution should be exercised in applying power to the LMH6559. When the negative power supply pin is left float- ing it is recommended that other pins, such as positive supply and signal input should also be left unconnected ...
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Physical Dimensions inches (millimeters) unless otherwise noted 8-Pin SOIC NS Package Number M08A 5-Pin SOT23 NS Package Number MF05A 21 www.national.com ...
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... BANNED SUBSTANCE COMPLIANCE National Semiconductor follows the provisions of the Product Stewardship Guide for Customers (CSP-9-111C2) and Banned Substances and Materials of Interest Specification (CSP-9-111S2) for regulatory environmental compliance. Details may be found at: www.national.com/quality/green. ...