SI4965DY Vishay, SI4965DY Datasheet - Page 3

• Manufacturer Part Number: SI4965DY
• Description: MOSFET Power 8V 8A 2W
• Manufacturer: Vishay

Specifications of SI4965DY

• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70826
S-31989—Rev. B, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
0.06
0.04
0.02
0.00
30
24
18
12
6
0
5
4
3
2
1
0
0.0
0
0
V
I
D
DS
0.5
= 8.0 A
On-Resistance vs. Drain Current
= 4 V
V
6
8
V
DS
GS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
= 1.8 V
I
1.0
D
- Total Gate Charge (nC)
V
GS
- Drain Current (A)
Gate Charge
12
16
= 5 thru 2.5 V
1.5
18
24
2.0
V
V
GS
GS
= 2.5 V
= 4.5 V
1.5 V
24
32
2.5
2 V
1 V
3.0
30
40
7000
6000
5000
4000
3000
2000
1000
1.5
1.2
0.9
0.6
30
24
18
12
6
0
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 8.0 A
0.5
V
V
= 4.5 V
DS
GS
T
C
Transfer Characteristics
J
0
oss
2
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
1.0
Vishay Siliconix
50
4
T
C
25_C
1.5
C
= - 55_C
iss
75
Si4965DY
100
6
www.vishay.com
2.0
125_C
125
150
2.5
8
3