SI4965DY Vishay, SI4965DY Datasheet
SI4965DY
Manufacturer Part Number
SI4965DY
Description
MOSFET Power 8V 8A 2W
Manufacturer
Vishay
Specifications of SI4965DY
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.021 Ohms
Drain-source Breakdown Voltage
- 8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4965DY
Manufacturer:
VISHAY
Quantity:
210
Part Number:
SI4965DY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4965DY-T1
Manufacturer:
RENESAS
Quantity:
471
Part Number:
SI4965DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4965DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4965DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4965DYT1
Manufacturer:
ST
Quantity:
6 690
Notes
a.
b.
Document Number: 70826
S-31989—Rev. B, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board.
t v 10 sec.
DS
- 8
(V)
Ordering Information: Si4965DY
G
G
S
S
1
1
2
2
J
J
a, b
a, b
0.021 @ V
0.027 @ V
0.040 @ V
1
2
3
4
= 150_C)
= 150_C)
a
a
r
DS(on)
Dual P-Channel 1.8-V (G-S) MOSFET
Top View
Si4965DY-T1 (with Tape and Reel)
Parameter
Parameter
SO-8
GS
GS
GS
a, b
a, b
(W)
= - 4.5 V
= - 2.5 V
= - 1.8 V
a, b
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
- 8.0
- 7.0
- 5.8
(A)
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
G
1
P-Channel MOSFET
Symbol
Symbol
T
D
R
R
V
V
J
I
P
P
, T
DM
1
I
I
I
thJA
DS
GS
D
D
S
S
D
D
stg
1
D
1
Typical
93
G
2
- 55 to 150
Limit
Vishay Siliconix
- 1.7
"8
- 8.0
- 6.4
2.0
1.3
- 30
P-Channel MOSFET
- 8
Maximum
D
2
S
62.5
2
Si4965DY
D
2
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
W
W
V
V
A
A
1
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