SI4965DY Vishay, SI4965DY Datasheet - Page 2

• Manufacturer Part Number: SI4965DY
• Description: MOSFET Power 8V 8A 2W
• Manufacturer: Vishay

Specifications of SI4965DY

• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Notes
a.
b.
www.vishay.com
2
Si4965DY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
t
SD
t
rr
fs
gs
gd
r
f
g
V
I
DS
D
V
^ - 1 A, V
DS
= - 4 V, V
I
V
F
V
V
V
V
= - 8 V, V
DS
V
V
= - 1.7 A, di/dt = 100 A/ms
GS
GS
V
GS
I
DS
S
V
V
DS
Test Condition
DS
DS
DD
DD
= - 1.7 A, V
w - 5 V, V
= - 2.5 V, I
= - 1.8 V, I
= - 4.5 V, I
= V
= 0 V, V
= - 5 V, I
= - 8 V, V
= - 4 V, R
= - 4 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
D
GS
= - 250 mA
D
D
D
GS
GS
= - 8.0 A
L
L
= - 7.0 A
= - 5.8 A
= "8 V
= - 8.0 A
= - 4.5 V
= 4 W
= 4 W
= 0 V
= 0 V
J
D
= 70_C
G
= - 8.0 A
= 6 W
Min
- 0.45
- 20
0.0175
0.022
0.031
Typ
170
7.5
5.0
27
36
35
45
90
60
S-31989—Rev. B, 13-Oct-03
Document Number: 70826
"100
Max
0.021
0.027
0.040
- 1.2
340
180
55
70
90
90
- 1
- 5
Unit
nA
mA
mA
nC
ns
W
V
A
S
V