PSMN035-150P NXP Semiconductors, PSMN035-150P Datasheet - Page 3

• Manufacturer Part Number: PSMN035-150P
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-150P

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: PSMN035-150P,127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN035-150P_4
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
(%)
I
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
non-repetitive
avalanche current
50
100
Conditions
T
T
T
T
t
T
T
t
V
unclamped; t
V
R
p
p
j
j
mb
mb
mb
mb
GS
sup
GS
150
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 100 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C
= 10 V; T
T
= 50 Ω; unclamped; see
≤ 50 V; V
mb
03aa24
(°C)
Rev. 04 — 16 November 2009
200
j
p
≤ 175 °C
j
j(init)
GS
= 0.1 ms; R
≥ 25 °C; R
= 10 V; T
Figure 1
Figure 3
= 25 °C; I
Figure 1
mb
mb
N-channel TrenchMOS SiliconMAX standard level FET
= 25 °C; see
= 25 °C
GS
Fig 2.
GS
j(init)
and
D
and
= 20 kΩ
= 50 Ω; see
= 47 A; V
Figure 4
(A)
I
= 25 °C;
2
D
10
10
2
10
1
3
2
currents as a function of drain-source volt
Safe operating area; continuous and peak drain
1
P
Figure 2
R
DSon
sup
t
p
Figure 4
= V
≤ 50 V;
T
DS
d =
/ I
10
D
T
t
t
p
PSMN035-150P
D.C.
10
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
2
100 ms
V
t
© NXP B.V. 2009. All rights reserved.
100 μs
10 ms
p
1 ms
DS
= 10 μs
003aaa016
(V)
Max
150
150
20
36
50
200
250
175
175
50
200
460
50
10
3
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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