BUK9518-55A NXP Semiconductors, BUK9518-55A Datasheet - Page 7

• Manufacturer Part Number: BUK9518-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK9518-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9518-55A,127

NXP Semiconductors
BUK9518-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
S
120
100
D
80
60
40
20
-1
-2
-3
-4
-5
-6
0
0.0
voltage; typical values
gate-source voltage
Source current as a function of source-drain
Sub-threshold drain current as a function of
0
0.5
T
j
= 150 ºC
1
min
1.0
typ
2
T
max
1.5
j
= 25 ºC
V
All information provided in this document is subject to legal disclaimers.
GS
V
03aa36
SD
(V)
03ne15
(V)
Rev. 02 — 17 February 2011
2.0
3
Fig 6.
Fig 8.
(pF)
C
R
(mΩ)
DSon
4500
4000
3500
3000
2500
2000
1500
1000
500
20
18
16
14
12
10
0
of gate-source voltage; typical values
as a function of drain-source voltage; typical
values
Drain-source on-state resistance as a function
10
Input, output and reverse transfer capacitances
3
−2
N-channel TrenchMOS logic level FET
5
10
−1
7
BUK9518-55A
9
1
C
C
C
iss
oss
rss
11
10
© NXP B.V. 2011. All rights reserved.
V
13
DS
V
03ne44
GS
03ne47
(V)
(V)
15
10
2
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