BUK9518-55A NXP Semiconductors, BUK9518-55A Datasheet - Page 2

• Manufacturer Part Number: BUK9518-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK9518-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9518-55A,127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9518-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9518-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
…continued
Simplified outline
V
Conditions
I
R
T
T
D
j(init)
j
GS
GS
= 61 A; V
= 25 °C; see
SOT78A (TO-220AB)
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
D
sup
1 2
= 25 A; V
GS
mb
≤ 55 V;
Figure 13
= 5 V;
3
N-channel TrenchMOS logic level FET
DS
= 44 V;
BUK9518-55A
Graphic symbol
Min
-
-
G
mbb076
© NXP B.V. 2011. All rights reserved.
Typ
-
14
Version
SOT78A
D
S
Max Unit
127
-
2 of 14
mJ
nC