BLA1011-300 NXP Semiconductors, BLA1011-300 Datasheet - Page 5

• Manufacturer Part Number: BLA1011-300
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-300

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-957
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-300,112

NXP Semiconductors
BLA1011-300_2
Product data sheet
Fig 4. Load power as a function of input power;
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
(W)
P
400
L
300
200
100
0
BLA1011-300 in a wideband circuit; V
I
typical values
Dq
0
= 150 mA; t
2
p
= 50 s;
4
= 2 %.
6
(3)
(1)
(2)
8
DS
001aag192
P
= 32 V;
i
(W)
Rev. 02 — 5 February 2008
10
Fig 5. Power gain and drain efficiency as functions of
(dB)
G
p
20
18
16
14
12
10
1020
V
frequency; typical values
DS
= 32 V; I
G
D
p
1040
Dq
= 150 mA; t
Avionics LDMOS transistors
1060
BLA1011-300
p
= 50 s; = 2 %.
1080
© NXP B.V. 2008. All rights reserved.
f (MHz)
001aag193
1100
70
60
50
40
30
20
(%)
D
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