BLA1011-300 NXP Semiconductors, BLA1011-300 Datasheet - Page 4

• Manufacturer Part Number: BLA1011-300
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-300

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-957
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-300,112

NXP Semiconductors
BLA1011-300_2
Product data sheet
Fig 2. Drain efficiency as functions of load power;
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
(%)
D
80
60
40
20
0
BLA1011-300 in a wideband circuit; V
I
typical values
Dq
0
= 150 mA; t
7.1 Ruggedness in class-AB operation
100
p
= 50 s;
Table 8.
The BLA1011-300 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
f
MHz
1030
1060
1090
Dq
Fig 1. Definition of transistor impedance
= 150 mA; P
200
(1)
(2)
(3)
= 2 %.
Typical impedance
300
L
DS
P
001aag190
= 300 W; f = 1030 MHz to 1090 MHz.
L
= 32 V;
(W)
Rev. 02 — 5 February 2008
400
Z
4.25
4.24
4.47
S
Fig 3. Power gain as a function of load power; typical
gate
j3.57
j3.56
j3.71
Z
(dB)
(1) f = 1030 MHz
(2) f = 1060 MHz
(3) f = 1090 MHz
G
S
p
20
16
12
8
4
0
BLA1011-300 in a wideband circuit; V
I
values
Dq
0
= 150 mA; t
001aag189
Z
drain
L
100
p
= 50 s;
Avionics LDMOS transistors
(2)
(3)
(1)
Z
1.27
1.04
0.91
200
BLA1011-300
L
= 2 %.
j0.33
j0.41
j0.60
DS
300
= 32 V;
© NXP B.V. 2008. All rights reserved.
DS
P
001aag191
L
= 32 V;
(W)
400
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