BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet - Page 13

MOSFET Power BULK TNS-MICP

BLA1011-200

Manufacturer Part Number
BLA1011-200
Description
MOSFET Power BULK TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA1011-200

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
SOT-502
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details
Other names
BLA1011-200,112

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLA1011-200
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLA1011-200
Manufacturer:
NXP
Quantity:
1 400
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Part Number:
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Quantity:
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Part Number:
BLA1011-200_BLA1011S-200
Manufacturer:
MINI
Quantity:
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Philips Semiconductors
17. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ruggedness in class-AB operation. . . . . . . . . . 3
BLA1011-200; BLA1011S-200
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
Avionics LDMOS transistor
Document number: 9397 750 14634
Date of release: 26 October 2005

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