BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet - Page 11

• Manufacturer Part Number: BLA1011-200
• Description: MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-200,112

Philips Semiconductors
11. Revision history
Table 10:
9397 750 14634
Product data sheet
Document ID
BLA1011-200_BLA1
011S-200_8
Modifications:
BLA1011-200_7
BLA1011-200_6
BLA1011-200_5
BLA1011-200_4
BLA1011-200_N_3
BLA1011-200_N_2
BLA1011-200_N_1
Revision history
Release date
20051026
20031111
20020318
20010515
20010417
20010302
20001201
20000906
•
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
SOT502B package added.
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product specification
Product specification
Product specification
Rev. 08 — 26 October 2005
BLA1011-200; BLA1011S-200
Change notice Doc. number
-
-
-
-
-
-
-
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9397 750 14634
9397 750 12246
9397 750 09414
9397 750 08376
9397 750 08139
9397 750 08109
9397 750 07638
9397 750 07326
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Avionics LDMOS transistor
Supersedes
BLA1011-200_7
BLA1011-200_6
BLA1011-200_5
BLA1011-200_4
BLA1011-200_N_3
BLA1011-200_N_2
BLA1011-200_N_1
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