PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 8
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PSMN4R3-80ES,127
Manufacturer Part Number
PSMN4R3-80ES,127
Description
MOSFET Power N-Ch 80V 4.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN4R3-80ES127.pdf
(15 pages)
Specifications of PSMN4R3-80ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
104 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
111nC @ 10V
Input Capacitance (ciss) @ Vds
8161pF @ 40V
Power - Max
306W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065164127
NXP Semiconductors
PSMN4R3-80ES
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(pF)
I
10
10
10
10
10
10
D
10
C
10
10
10
−1
−2
−3
−4
−5
−6
5
4
3
2
10
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
-1
1
2
min
typ
10
4
max
V
V
GS
All information provided in this document is subject to legal disclaimers.
GS
003aaf623
C
C
(V)
iss
rss
(V)
03aa35
10
6
Rev. 02 — 18 April 2011
2
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normailzed drain-source on-state resistance
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN4R3-80ES
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
003aad280
T
003aaf608
j
j
(°C)
( ° C)
180
180
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