PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 11
![MOSFET Power N-Ch 80V 4.3 mOhms](/photos/39/68/396866/sot225_sml.jpg)
PSMN4R3-80ES,127
Manufacturer Part Number
PSMN4R3-80ES,127
Description
MOSFET Power N-Ch 80V 4.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN4R3-80ES127.pdf
(15 pages)
Specifications of PSMN4R3-80ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
104 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
111nC @ 10V
Input Capacitance (ciss) @ Vds
8161pF @ 40V
Power - Max
306W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065164127
NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT226 (I2PAK)
PSMN4R3-80ES
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT226
4.5
4.1
A
1.40
1.27
A
1
0.85
0.60
b
IEC
D
L
b
1.3
1.0
1
D
1
b
1
0.7
0.4
c
All information provided in this document is subject to legal disclaimers.
TO-262
JEDEC
1
max
e
11
D
E
REFERENCES
2
e
Rev. 02 — 18 April 2011
1.6
1.2
D
1
3
0
b
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
10.3
9.7
E
L
JEITA
scale
1
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
A
L
1
1
Q
2.6
2.2
Q
A
PSMN4R3-80ES
PROJECTION
EUROPEAN
c
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
06-02-14
09-08-25
SOT226
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