PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN4R3-80ES,127
• Description: MOSFET Power N-Ch 80V 4.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R3-80ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 104 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 111nC @ 10V
• Input Capacitance (ciss) @ Vds: 8161pF @ 40V
• Power - Max: 306W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065164127

NXP Semiconductors
6. Characteristics
Table 6.
PSMN4R3-80ES
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
I
see
I
see
V
T
V
V
I
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
GS
Rev. 02 — 18 April 2011
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 75 A; V
= 25 A; V
= 75 A
Figure 10
Figure 10
Figure
Figure 12
Figure 13
Figure 12
Figure
Figure
= 80 V; V
= 80 V; V
= 40 V; V
= 40 V; R
= -20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; R
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
DS
10; see
14; see
14; see
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
GS
DS
L
G(ext)
GS
GS
DS
= 25 A; T
= 25 A; T
= 25 A; T
= 40 V; V
= 40 V;
= V
= V
= V
Figure 16
= 0.53 Ω;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 11
Figure 15
Figure 15
= 4.7 Ω;
; T
; T
; T
GS
j
j
j
j
j
j
GS
= 10 V
j
j
j
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
= 25 °C;
= 100 °C;
j
j
j
= 25 °C
= 175 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 10 V;
PSMN4R3-80ES
[1]
[1]
[1]
Min
73
80
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.02
-
-
-
8.9
3.7
6.1
0.9
104
111
38
24
14
28
6.1
8161
701
337
38
29
94
33
© NXP B.V. 2011. All rights reserved.
-
Max
-
-
-
4.6
4
10
500
100
100
10.3
4.3
7.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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