IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet - Page 6

• Manufacturer Part Number: IPG20N06S2L-35
• Description: MOSFET Power Dual N-Ch 55V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N06S2L-35

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N06S2L35XT

Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
2.5
1.5
0.5
= f(T
2
1
0
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
27µA
0.6
V
T
SD
j
60
[°C]
25 °C
[V]
0.8
270µA
100
1
140
4)
1.2
180
1.4
page 6
10 Typ. Capacitances
C = f(V
12 Avalanche characteristics
I
parameter: T
A S
= f(t
100
10
10
10
10
0.1
10
1
4
3
2
1
AV
DS
1
0
)
); V
j(start)
GS
5
= 0 V; f = 1 MHz
10
10
4)
t
V
AV
DS
15
[µs]
[V]
4)
IPG20N06S2L-35
100
150 °C
20
100 °C
25
25 °C
2009-09-07
Coss
Crss
Ciss
1000
30