IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet

MOSFET Power Dual N-Ch 55V MOSFET

IPG20N06S2L-35

Manufacturer Part Number

IPG20N06S2L-35

Description

MOSFET Power Dual N-Ch 55V MOSFET

Manufacturer

Infineon Technologies

Datasheets

1.IPG20N06S2L-35.pdf (9 pages)

2.IPG20N06S2L-35.pdf (9 pages)

Specifications of IPG20N06S2L-35

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

35 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

20 A

Power Dissipation

65 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TDSON-8

Lead Free Status / Rohs Status

Details

Other names

IPG20N06S2L35XT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IPG20N06S2L-35

Manufacturer:

ST

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IPG20N06S2L-35

Manufacturer:

INF

Quantity:

9 999

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IPG20N06S2L-35

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IPG20N06S2L-35

0

Company:

H&T Electronics

H&T Electronics

Part Number:

IPG20N06S2L-35

Quantity:

70

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IPG20N06S2L-35A

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Current page: 1 of 9
Download datasheet (163Kb)

Rev. 1.0

OptiMOS

Features

• Dual N-channel Logic Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

Parameter

Continuous drain current

one channel active

Pulsed drain current

one channel active

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

one channel active

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Type

IPG20N06S2L-35

®

Power-Transistor

2)

2)

Package

PG-TDSON-8-4

j

=25 °C, unless otherwise specified

2, 4)

4)

Symbol

I

I

E

I

V

P

T

-

D

D,pulse

AS

j

AS

GS

tot

, T

Marking

2N06L35

stg

T

T

-

I

-

-

T

-

-

D

C

C

C

=10A

page 1

=25 °C, V

=100 °C, V

=25 °C

Conditions

GS

Product Summary

V

R

I

GS

D

=10 V

DS

DS(on),max

=10 V

1)

4)

-55 ... +175

55/175/56

Value

100

±20

20

20

80

15

65

IPG20N06S2L-35

PG-TDSON-8-4

55

35

20

2009-09-07

Unit

A

mJ

A

V

W

°C

V

m

A

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