DC1575A Linear Technology, DC1575A Datasheet - Page 5

• Manufacturer Part Number: DC1575A
• Description: LTC4362-1/LTC4362-2 Overvoltage/Overcurrent Protector With LatchOff/Auto-Retry
• Manufacturer: Linear Technology
• Series: -r

Specifications of DC1575A

• Design Resources: DC1575A Schematic DC1575 Design Files
• Main Purpose: Overvoltage/Overcurrent Protection
• Embedded: No
• Utilized Ic / Part: LTC4362-2
• Primary Attributes: -
• Secondary Attributes: -
• Kit Application Type: Power Management
• Application Sub Type: Overvoltage Protection
• Features: Demonstrates Two Protection Schemes Selected At JP2, Provides Connection For USB Protection
• Lead Free Status / Rohs Status: Not applicable / Not applicable

0.5A/DIV
TYPICAL PERFORMANCE CHARACTERISTICS
Specifi cations are at T
PIN FUNCTIONS
GATEP: Gate Drive for External P-channel MOSFET. GATEP
connects to the gate of an optional external P-channel
MOSFET to protect against negative voltages at IN. Inter-
nally clamped to 5.8V below V
connects this pin to ground. Connect to IN if unused.
GND: Device Ground.
IN: Supply Voltage Input. Connect this pin to the input
power supply. This pin has an overvoltage threshold of
5.8V. After an overvoltage event, this pin must fall below
V
lockout, the internal N-channel MOSFET remains off and
the PWRGD pull-down releases.
ON: On Control Input. A logic low at ON enables the
LTC4362. A logic high at ON activates a low current pull-
down on the gate of the internal N-channel MOSFET and
causes the LTC4362 to enter a low current sleep mode. An
internal 5μA current pulls ON down to ground. Connect
to ground or leave open if unused.
5V/DIV
5V/DIV
I
IN(OV)
CABLE
V
OUT
V
IN
FIGURE 4 CIRCUIT
R
LOAD = 10Ω, C
Normal Start-Up Sequence
IN
– ΔV
= 150mΩ, L
OV
to release the overvoltage lockout. During
OUT
IN
= 0.7μH
20ms/DIV
= 10μF
A
= 25°C, V
IN
IN
= 5V, V
436212 G10
. An internal 2M resistor
ON
= 0V unless otherwise noted.
0.5A/DIV
5V/DIV
5V/DIV
I
CABLE
V
OUT
V
IN
FIGURE 4 CIRCUIT
R
LOAD = 10Ω, C
Turn-On Ramp-Up
IN
= 150mΩ, L
OUT
IN
= 0.7μH
1ms/DIV
= 10μF
OUT: Source of Internal N-channel MOSFET. Connect to
load.
PWRGD: Power Good Status. Open-drain output with
internal 500k resistive pull-up to OUT. Pulls low 65ms
after the MOSFET gate ramps above its internal gate high
threshold.
SENSE, Exposed Pad: Current Sense Node and Internal
N-channel MOSFET Drain. An internal sense resistor
between IN and SENSE is used to implement the 1.5A
overcurrent threshold. The exposed pad is connected to
SENSE and must be soldered to an electrically isolated
printed circuit board trace to properly transfer the heat
out of the package. To disable the overcurrent function,
connect SENSE and the exposed pad to IN.
436212 G11
LTC4362-1/LTC4362-2
0.5A/DIV
5V/DIV
5V/DIV
5V/DIV
I
CABLE
V
V
OUT
V
ON
IN
Entering Sleep Mode
FIGURE 4 CIRCUIT
R
LOAD = 10Ω, C
IN
= 150mΩ, L
OUT
IN
= 0.7μH
50μs/DIV
= 10μF
436212 G12
436212fa
5